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| PD- 93758D IRLMS2002 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated D D G 1 6 A D VDSS = 20V 2 5 D S 3 4 RDS(on) = 0.030 Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Top View Micro6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 20 6.5 5.2 20 2.0 1.3 0.016 12 -55 to + 150 Units V A W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 62.5 Units C/W www.irf.com 1 01/13/03 IRLMS2002 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 20 --- --- --- 0.60 13 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.016 --- --- --- --- --- --- --- --- 15 2.2 3.5 8.5 11 36 16 1310 150 36 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.030 VGS = 4.5V, ID = 6.5A 0.045 VGS = 2.5V, ID = 5.2A 1.2 V VDS = V GS, ID = 250A --- S VDS = 10V, ID = 6.5A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, V GS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 22 ID = 6.5A 3.3 nC VDS = 10V 5.3 VGS = 5.0V --- VDD = 10V --- ID = 1.0A ns --- RG = 6.0 --- RD = 10 --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 19 13 2.0 A 20 1.2 29 20 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, I F = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRLMS2002 100 VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.50V TOP 10 10 1.50V 1.50V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 C TJ = 150 C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 5.3A I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 1.5 V DS = 15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLMS2002 2000 1600 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 6.5A 5.3A VDS = 10V 8 C, Capacitance (pF) Ciss 1200 6 800 4 400 2 0 1 Coss Crss 10 100 0 0 4 8 12 16 20 24 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 C I D , Drain Current (A) 10 1ms 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLMS2002 6.0 0.20 5.0 0.10 ID , Drain Current (A) VGS(th) , Variace ( V ) 4.0 0.00 Id = 250A -0.10 3.0 2.0 -0.20 1.0 -0.30 -0.40 0.0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature ( C) T J , Temperature ( C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Vgs(th) Variance Vs. Juction Temperature 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLMS2002 RDS ( on) , Drain-to-Source On Resistance ( ) 0.040 0.10 RDS(on) , Drain-to -Source Voltage ( ) 0.035 0.08 0.030 0.06 0.025 Id = 5.3A 0.04 VGS= 2.5V VGS = 4.5V 0.020 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.02 0 10 20 30 40 VGS, Gate -to -Source Voltage ( V ) ID, - Drain Current (A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current 6 www.irf.com IRLMS2002 Micro6 Package Outline 3.00 (.118 ) 2.80 (.111 ) LEAD ASSIGNMENTS -BD D S RECOMMENDED FOOTPRINT 2X 0.95 (.0375 ) 6X (1.06 (.042 ) 1.75 (.068 ) 1.50 (.060 ) -A- 6 1 5 2 4 3.00 (.118 ) 2.60 (.103 ) 3 6 1 5 2 4 3 2.20 (.087 ) 0.95 ( .0375 ) 2X D 0.50 (.019 ) 6X 0.35 (.014 ) 0.15 (.006 ) M C A S B S D G 6X 0.65 (.025 ) 0 -10 1.30 (.051 ) 0.90 (.036 ) -C0.15 (.006 ) MAX. 1.45 (.057 ) 0.90 (.036 ) 0.10 (.004 ) 6 SURFACES O O 6X 0.20 (.007 ) 0.09 (.004 ) 0.60 (.023 ) 0.10 (.004 ) NOTES : 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : MILLIMETER. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Micro6 Tape & Reel Information 8mm Micro6 P 4mm FEED DIRECTION NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com 7 IRLMS2002 Micro6 Part Marking Information Notes: This part marking information applies to devices produced before 02/26/2001 EXAMPLE: THIS IS AN IRLMS6702 WW = (1-26) IF PRECEDED BY L AST DIGIT OF CALENDAR YEAR YEAR PART NUMBER DATE CODE TOP 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D WAFER LOT NUMBER CODE 24 25 26 X Y Z BOT TOM PART NUMBER CODE REFERENCE: 2A = 2B = 2C = 2D = 2E = 2F = 2G = 2H = IRLMS 1902 IRLMS 1503 IRLMS 6702 IRLMS 5703 IRLMS 6802 IRLMS 4502 IRLMS 2002 IRLMS 6803 WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D DAT E CODE EXAMPLES: YWW = 9603 = 6C YWW = 9632 = FF 50 51 X Y Notes: This part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y = YEAR W = WEEK 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D TOP LOT CODE PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLMS 1902 IRLMS 1503 IRLMS 6702 IRLMS 5703 IRLMS 6802 IRLMS 4502 IRLMS 2002 IRLMS 6803 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LET TER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/03 8 www.irf.com |
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